• Innovative features enable improvements in VR efficiency
  • Unique fast tri-level PWM signaling scheme for rapid switching & disable of MOSFETs and fast phase shedding
  • Flexibility in gate drive voltages and fast transition times
• Highly reliable adaptive anti-shoot-through circuit to minimize the dead time and prevent cross conduction of the external FETs
  • Accurate, differential comparators to measure phase and gate voltages, compared to industry standard self-biased single ended comparators
  • Design ensures that MOSFET body diode conduction time is reduced
• Single PWM pin to disable the device
  • Eliminates the need for extra trace routing found in traditional drivers using an ODB pin and allows control over each phase
• Large sink current capability for the low side MOSFET to reduce the possibility of shoot-through
• Unique anti-ringing blanking logic 
  • Ensures that ringing nodes do not create false gate drive triggering
• Available in cost effective SOIC or thermally enhanced DFN packages for higher switching frequency applications

The VR designer can select a driver optimized for the end application and the type of MOSFETs used in the power train.